Monocrystalline silicon carbide wafers processing
Автор: Ivenin Stanislav Vasilyevich
Журнал: Инженерные технологии и системы @vestnik-mrsu
Рубрика: Электротехника
Статья в выпуске: 4, 2015 года.
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The present paper considers the methods of processing monocrystalline SiC wafers from cutting to polishing. The review of scientific papers by Russian and foreign authors shows that the most important and crucial is the final phase, which aimed at assurance of a high quality of surface (roughness
Silicon carbide, cutting, grinding, polishing, mechanical polishing, chemical polishing, chemical-mechanical polishing, material removal rate, roughness, mrr
Короткий адрес: https://sciup.org/14720187
IDR: 14720187 | DOI: 10.15507/0236-2910.025.201504.037