Monocrystalline silicon carbide wafers processing

Автор: Ivenin Stanislav Vasilyevich

Журнал: Инженерные технологии и системы @vestnik-mrsu

Рубрика: Электротехника

Статья в выпуске: 4, 2015 года.

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The present paper considers the methods of processing monocrystalline SiC wafers from cutting to polishing. The review of scientific papers by Russian and foreign authors shows that the most important and crucial is the final phase, which aimed at assurance of a high quality of surface (roughness

Silicon carbide, cutting, grinding, polishing, mechanical polishing, chemical polishing, chemical-mechanical polishing, material removal rate, roughness, mrr

Короткий адрес: https://sciup.org/14720187

IDR: 14720187   |   DOI: 10.15507/0236-2910.025.201504.037

Статья научная