Defining the parameters of levels involved in the degradation of leds based on InGaN
Автор: Grushko Natalia, Vostretsova Lubov
Журнал: Известия Самарского научного центра Российской академии наук @izvestiya-ssc
Рубрика: Физика и электроника
Статья в выпуске: 4-4 т.14, 2012 года.
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Тhe change of the current-voltage characteristics of the LEDs glow blue with the modulated and uniform doping based on GaN and its solid solutions with a long running time and under the influence of γ-irradiation (0.1 - 0.5 Mrad) was studied. Defined a different mechanism to change the electrical properties of the structures depending on the type of doping. The parameters of the levels involved in the creation of the tunnel flow.
Cветодиоды, leds, degradation, recombination, tunneling, brightness
Короткий адрес: https://sciup.org/148201333
IDR: 148201333