Defining the parameters of levels involved in the degradation of leds based on InGaN

Бесплатный доступ

Тhe change of the current-voltage characteristics of the LEDs glow blue with the modulated and uniform doping based on GaN and its solid solutions with a long running time and under the influence of γ-irradiation (0.1 - 0.5 Mrad) was studied. Defined a different mechanism to change the electrical properties of the structures depending on the type of doping. The parameters of the levels involved in the creation of the tunnel flow.

Cветодиоды, leds, degradation, recombination, tunneling, brightness

Короткий адрес: https://sciup.org/148201333

IDR: 148201333

Статья научная