Operating features of a random number generator with a transistor noise source in different temperature conditions

Devices that generate a random set of numbers are used in various fields. In this paper, we consider a variant of implementing a noise source based on the emitter р-n junction of a bipolar transistor. This paper examines the practical characteristics of random number generation based on the noise of such a transition. The operating region of generation and the level of the random signal were determined, and the temperature dependence of the operating modes for the р-n junction of the KT3102 transistor was obtained. Assumptions have been made about the physical mechanism for the occurrence of such noise, which will make it possible to standardize the selection of transistors for such a task. Checking the obtained random sequences using statistical tests [3] showed that the sequence of zeros and ones we obtained can be considered random with a confidence level of 99%.