Features of growing thin film nitride-based coatings

The article considers the conditions for growing thin films of nitrides (TiN, Si3N4 and AlN) by ion-beam sputtering. The ion-beam method for obtaining layers involves three stages: sputtering of the target with ions of a chemically active component or its mixture with an inert gas; transfer of sputtered particles to the substrate surface; formation of a thin film on the substrate surface. Using the MathCad mathematical program we have simulated the first stage of nitride film growth according Sigmund’s theory. We have calculated the sputtering coefficients of Ti, Si and Al targets by beams of Ar+ and N2+ ions, as well as by a mixture of Ar+ and N2+ gases of various compositions in the range of sputtering ion energies from 1 keV to 10 keV. The calculation results allowed us to propose optimal coating growth modes.