The semiconductor film at the base of gallium polyphosphate, synthesized by the method of solid-phase reaction
Автор: Vassel N.P., Kuren S.G., Vassel S.S., Pavlova I.V.
Журнал: Вестник Донского государственного технического университета @vestnik-donstu
Рубрика: Технические науки
Статья в выпуске: 3 (42) т.9, 2009 года.
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Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and the properties semiconductor film at the base of gallium polyphosphate.
Короткий адрес: https://sciup.org/14249280
IDR: 14249280
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