Semiconductor gas oxygen sensors based on polycrystalline films of samarium sulfide

Oxygen sensors based on samarium sulfide were made. The methods of coating of semiconductor samarium sulfide (SmS) thin and thick films on the dielectric substrates, as well as methods of forming of gas-sensitive layers of semiconductor oxygen sensors based on them were developed. A model describing the processes of oxygen chemisorption on the surface of such detectors was chosen, and main characteristics of semiconductor oxygen sensors were obtained: calibration dependence, static and dynamic parameters of converters, sensors time constant of the response to the concentration effect (~ 0.5 s). The paper briefly describes the construction features of oxygen sensors, made on the basis of a standard design. The advantages of this type of sensors in comparison with analogs are given.