Semiconductor devices with negative resistance of transfer volt-ampere characteristic
Автор: Novikov Sergey, Gurin Nectary, Berintsev Alexei, Rodionov Vyacheslav, Shtanko Alexander
Журнал: Известия Самарского научного центра Российской академии наук @izvestiya-ssc
Рубрика: Физика и электроника
Статья в выпуске: 6-1 т.15, 2013 года.
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We consider a novel class of semiconductor devices with transfer volt-ampere characteristics comprising a segment with negative differential conductivity and negative differential resistance. Methods to describe and realize devices with S-and N-shape transfer volt-ampere characteristics are offered. Also, transfer characteristics have been simulated.
Negative resistance, negative conductivity, modeling, transfer volt-ampere characteristic
Короткий адрес: https://sciup.org/148205674
IDR: 148205674
