The device for measurement of a steepness of low-power field transistors

Автор: Sudorgin Sergey Alexandrovich

Журнал: Математическая физика и компьютерное моделирование @mpcm-jvolsu

Рубрика: Радиотехника

Статья в выпуске: 1 (14), 2011 года.

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In the paper describe of the micro controller device for measurement of a steepness of low-power field transistors. The block diagram, the basic electrical circuit, and the algorithm of job of the device show in the paper. The basic circuit of a power unit of the device and its load-carrying characteristics also is submitted. The results of measurements of a steepness of field transistors of various types are shown in the table.

Транзисторы с каналом p-типа, p-channel transistors, транзисторы с каналом n-типа, field transistors, steepness of transistors, n-channel transistors

Короткий адрес: https://sciup.org/14968663

IDR: 14968663

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