Charge-coupled device and density of surface states
Автор: Ergashov A.K.
Журнал: Экономика и социум @ekonomika-socium
Рубрика: Основной раздел
Статья в выпуске: 5-2 (72), 2020 года.
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The principle of the charge-coupled device is investigated. The loss of part of the charge made it possible to determine the density of surface states at the semiconductor-insulator interface
Semiconductor, dielectric, charge-coupled device, density of surface states
Короткий адрес: https://sciup.org/140252312
IDR: 140252312
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