Progress in research on the technology of obtaining inorganic oxide semiconductors from type P copper (I) oxide

Progress in research on the technology of obtaining inorganic oxide semiconductors from type P copper (I) oxide

Автор: Ren Bingbing, Mindrov Konstantin

Журнал: Бюллетень науки и практики @bulletennauki

Рубрика: Технические науки

Статья в выпуске: 8 т.8, 2022 года.

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As a representative intrinsic type P inorganic semiconductor material, copper (I) oxide Cu2O has been widely used in photovoltaic, catalysis, chemical industries and other fields, and has an extremely important position. For a long time, the literature on the preparation method and preparation technology of Cu2O is relatively scattered and independent, resulting in a certain degree of obstacles and difficulty in obtaining relevant technical knowledge and understanding its internal principles. Aiming at the progress and innovation of Cu2O preparation methods and technology in recent years, combined with the team’s long-term experience accumulation and research results, this article focuses on the classification, principles and characteristics of Cu2O preparation methods, and the optimization methods and development directions of Cu2O preparation technology. The outlook was carried out. This review aims to provide reference and guidance for the preparation and research of Cu2O and other related inorganic oxide semiconductors.

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Copper (i) oxide, inorganic oxide, type p semiconductor

Короткий адрес: https://sciup.org/14125294

IDR: 14125294   |   DOI: 10.33619/2414-2948/81/26

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