Density distribution of electron states in microcrystalline hydrogen silicon

Using the method of photomodulation spectroscopy, we studied the distribution of the density of electronic states in the forbidden zone of microcrystalline hydrogenated silicon films with different levels of doping with boron. The distribution of the density of electronic states in the upper and lower halves of the band gap µc-Si: H is obtained. The results showed that: the tail of the density of states near the valence band is more gentle compared to the tail of the density of states near the conduction band.