Distribution of temperature in three-layers semiconductor structure, at influence on it of the locally distributed surface thermal load

The mathematical model of temperature fields formed in three-layers semiconductor structures of the rectangular shape is given at influence on exterior layer of a chip of the locally distributed surface thermal load, which results from instability of uniform distribution of a current and results in a break-down of semiconductor structure. The rating of possibilities of the analytical decision of a delivered task is carried out. The algorithm of the numerical decision is found and the results of the calculations and their comparison with results of experiment are presented.