Hall effect microwave power meter for high power mesurement based on silicon carbide layer on insulating substrate for aerospace system
Автор: Kurganskaya L.V., Shcherbak A.V.
Журнал: Известия Самарского научного центра Российской академии наук @izvestiya-ssc
Рубрика: Физика и электроника
Статья в выпуске: 6-1 т.13, 2011 года.
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A Hall Effect microwave power meter based on silicon carbide thin layer on insulating substrate design problems were discussed. Silicon carbide growth method and device design were suggested. Prototype device characteristics were demonstrated.
Microwave hall effect, microwave power meter
Короткий адрес: https://sciup.org/148200515
IDR: 148200515
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