Working out of the way of manufacturing of non-planar substrates for new generation of photovoltaic cells

A structure of an external lateral surface of single-crystals of silicon after etching in gas atmosphere H2 + 2 %об.HCl at high temperature had been researched.It is established that as a result of etching on a lateral surface of the silicon single-crystal cylindrical substrates which have been grown up in a direction , the periodic relief consisting of steps, by depth 0.1-5 microns, length to 50 microns is formed.