III-n movpe reactors: present and future

An analysis of the current situation on the market of III-N MOVPE equipment shows a lack of state-of-the-arts reactors of low-and moderate capacity. Our solution a compact horizontal flow reactor for one 100 mm wafer is presented in the paper. The reactor allows fast growth in the pressure range of 100-1600 mbar which results in a few times reduction of the duration of HEMT and LED epitaxial processes on sapphire and SiC substrates keeping high wafer uniformity. In addition to standard III-N materials and heterostructures deposition of Si3N4 and graphene layers, growth of GaN on graphene, doping with carbon from propane, and selective growth of highly-doped contact regions were demonstrated using the developed reactor.