Specificity of defect formation in detectors based on cadmium telluride under pulsed thermal influence
Автор: Mozzherin A.V., Paklin N.N., Loginov Yu.Yu.
Журнал: Siberian Aerospace Journal @vestnik-sibsau-en
Рубрика: Technological processes and material science
Статья в выпуске: 3 vol.25, 2024 года.
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Active development of science-intensive technologies in the aerospace industry requires consideration of the operation of devices and instruments under extreme conditions; it is important to study the degradation of materials during rapid heating and cooling. On the basis of the theoretical and experimental work performed, the authors of the paper consider the degradation of cadmium telluride detectors caused by the development and evolution of a network of point defects resulting from pulsed exposure with a heat dose of about 1,000º С for no more than 10 s, simulating an extreme situation of a short circuit near the detector or direct heating by light pulses. The study showed that the crystalline material quickly degrades under such extreme conditions due to the rapid evolution of the defect network. The phenomenological model of the formation and distribution of defects during short-term exposure of the detector to thermal radiation has been improved. Electron microscopic studies of samples exposed to pulsed infrared radiation showed the development of a dense defect network, vacancy and interstitial defects, their clusters and other damage in all samples.
Cadmium telluride, point defects, defect clusters, thermal defect formation
Короткий адрес: https://sciup.org/148329751
IDR: 148329751 | DOI: 10.31772/2712-8970-2024-25-3-384-390
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