Spinodal decomposition in epitaxial solid solutions of heterostructures AlxG1-xAs / GaAs (100) and GaxIn1-xP / GaAs (100)

Using the methods of XRD, SEM, ASM and IR-spectroscopy was studied the phenomenon of instability epitaxial semiconductors solid solutions in AlxGa1-xAs/GaAs(100) and GaxIn1-xP/GaAs(100) heterostructures in range of x~0.50. Was shown capability of formation the modulated relaxation structures on AlxGa1-xAs and GaxIn1-xP solid solutions surface, whereupon arising satellite of basic XRD patterns corresponding with single-phase structure.