Temperature dependence of semiconductor characteristics
Автор: Razhapov I.T.
Журнал: Экономика и социум @ekonomika-socium
Рубрика: Основной раздел
Статья в выпуске: 5-2 (72), 2020 года.
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The coefficient of the temperature dependence of the change in the band gap of the semiconductor is studied. The method of expansion of the density of surface states in terms of delta functions is used. The coefficient β is calculated by the margin of error.
Band gap, temperature dependence, delta function, density of surface states
Короткий адрес: https://sciup.org/140252233
IDR: 140252233
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