Temperature dependence of the energy gaps in acceleration semiconductors

In general, the band gap of a semiconductor narrows with increasing temperature, but materials such as PbS, PbTe and other lead holocogenides are encountered, where the width of the forbidden zone expands with increasing temperature. In the present work, using a mathematical model, the temperature dependence of the density spectrum of states, the changes in the band gap of a semiconductor are investigated. Explained the possibility of expanding the width of the forbidden zone with increasing temperature.