Strain sensitivity of structures with Schottky barrier made on the basis of silicon with nickel impurities depending on the resistance of its base area

In this work the strain properties of structures with Schottky barrier under the influence of pulse hydrostatic pressure are investigated. It is shown that the character of the dependence of the relative change in the forward current at a constant value of hydrostatic pressure on the electrical voltage is due to the presence of compensating impurities in the volume of the base material of the investigated structures with Schottky barrier. It is experimentally shown that due to the high resistivity (~102 and 103 Ohm∙cm) of the base material of the investigated structures the applied electric voltage is distributed between the potential barrier and the base material.