Test of strain gages based on SmS semiconductor thin films

The authors propose a method for determining the gage factor of strain gages based on polycrystalline films of samarium monosulphide (SmS) without loss of performance properties. We derive the relation between gage factor K and pressure coefficient of resistance under hydrostatic compression B (barorezistor mode). It is show that the correlation between K and B is determined only by elastic constants of strain sensitive layer of polycrystalline SmS and elastic constants of substrate on which it was formed.