KA band power amplifier and a low noise amplifier for a transmitter

A Ka band MMIC power amplifier and low noise amplifier using 0.15 um gate GaAs HEMT technology are presented. The peak gain of the power amplifier is measured across 30 to 38 GHz and is 15 dB. The MMIC area is a compact 6 mm2 and uses 10 mm device perimeter.The gain of the low noise amplifier is 17 dB in the band from 30 to 38 GHz, according to the simulation of the noise figure in the band is no more than 2.4 dB. The area of the low noise amplifier is 0.25 mm2, the perimeter is 2 mm.