Plant for molecular beam epitaxy «Katun-100»

One of the most promising technologies in semiconductor electronics is molecular beam epitaxy, which is a successive deposition on the semiconductor substrate of layers of atomic thickness of various materials from molecular beams in ultra-high vacuum (residual gas pressure less than 10–8 Pa). During this process (in situ), molecular beams and nanoheterostructures are diagnosed. Creation of high-performance micro-, nano- and photoelectronics devices based on semiconductor nanoheterostructures consisting of III-V compounds grown on cheap Si substrates is one of the priorities of modern semiconductor materials science. The solution this problem is extremely important for the development of high-performance photovoltaics. Modern high-performance solar cells are complex multilayer heterosystems with an efficiency of up to 45 % at a concentration of solar radiation in several hundred suns. They consist of three main p-n junctions made of Ge, InGaAs, InGaP connected in series by tunnel diodes. This article presents an automated compact plant of new generation of molecular beam epitaxy for epitaxy of films and nanostructures based on Si, Ge and (or) compounds of A3B5 type, developed at the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of RAS.