Hydride vapor phase epitaxy system for bulk GaN layers deposition
Автор: Voronenkov Vladislav Valerievitch, Bochkareva N.I., Virko M.V., Gorbunov R.I., Zubrilov A.S., Kogotkov V.S., Latyshev F.E., Lelikov Y.S., Leonidov A.A., Shreter Y.G.
Журнал: Научное приборостроение @nauchnoe-priborostroenie
Рубрика: Работы с конференции
Статья в выпуске: 4 т.28, 2018 года.
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Hydride Vapor Phase Epitaxy is a promising method for the industrial production of GaN substrates. However, no HVPE reactors for the GaN and AlN bulk layer deposition are available on the market. We have developed a HVPE reactor for mass production of bulk GaN and AlN epitaxial layers with thickness up to 10 mm and diameter of 50 mm. A load-lock vacuum chamber and dry in-situ cleaning of growth chamber and substrate holder were implemented to improve the process reproducibility. High-capacity precursor sources have been developed to implement non-stop growth of layers with total thickness of 10 mm and higher. Freestanding GaN crystals with thickness of 5 mm and diameter of 50 mm have been grown with the reactor.
Hvpe, gan, iii-нитриды, reactor, substrate, iii-nitrides
Короткий адрес: https://sciup.org/142217032
IDR: 142217032 | DOI: 10.18358/np-28-4-i2022