Varactor Diodes Based on Multilayer Epitaxial GaAs-composition for High-frequency Equipment
Автор: Suraykin A.I., Sumenkov A.N.
Журнал: Огарёв-online @ogarev-online
Статья в выпуске: 18 т.4, 2016 года.
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The article presents the results of designing and studying of semiconductor mesaepitaxial GaAs-varactor diodes for general application in high-frequency equipment. The study provides the general technical requirements for GaAs-varactor diodes and the electrical parameters of the experimental mesaepitaxial GaAs-varactor diodes.
Gallium arsenide, varactor diode, mesaepitaxial composition, capacity, quality factor, coefficient of capacity overlap
Короткий адрес: https://sciup.org/147250620
IDR: 147250620
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