Effect of lithiation on the conductivity of the anodic composite Si@O@Al

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The article presents the result of study on the anodic composite material Si@O@Al:Lix conductivity, where x=0 at.%; 5 at.% and 9 at.%. Based on the data of cyclic voltammetry and electrochemical impedance spectroscopy of the test structures Ti|Si@O@Al:Lix|Ti, it is shown that at x=0 Si@O@Al:Lix is a degenerate hole semiconductor. The nonlinearity of the current-voltage characteristic of the test structure indicates the varistor nature of conductivity in the bulk of the composite. At x=5 at.% and 9 at.%, the composite is a compensated degenerate electron semiconductor, in which the varistor effect is absent. The absence of the varistor effect at x>0 is explained by the appearance of an ionic percolation cluster, which shunts the dispersant of the electron percolation cluster.

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Composite, degenerate semiconductor, compensated semiconductor, current-voltage characteristics, percolation cluster

Короткий адрес: https://sciup.org/170211311

IDR: 170211311   |   DOI: 10.24412/2500-1000-2025-9-2-75-84