The influence of plate surface processing on the speed of silicon carbide thermal oxidation

Автор: Evishev A.V.

Журнал: Огарёв-online @ogarev-online

Статья в выпуске: 11 т.3, 2015 года.

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The study focuses on the influence of the processing quality of 4H-SiC plate surfaces on the speed of thermal oxidation of silicon carbide in dry oxygen. The surfaces of plates with a bigger roughness demonstrate thicker oxide film under otherwise equal conditions.

Короткий адрес: https://sciup.org/147248871

IDR: 147248871

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