Influence of impurity atoms of rhodium and iridium on capacitance characteristics of Si-SiО2 structures
Автор: Boboev A.Y., Urinboev Zh.A., Odilov Sh.I., Tursunov Sh.U., Marifzhonov K.Kh., Soliev A.A.
Журнал: Экономика и социум @ekonomika-socium
Рубрика: Основной раздел
Статья в выпуске: 6-1 (85), 2021 года.
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It is found that the doping of the semiconductor substrate with Rh and Ir atoms leads to an increase in the density of the surface states at the Si-SiO2 interface. It is determined that the surface states due to the presence of Rh and Ir impurities are effective generating centers.
Semiconductor, silicon, silicon dioxide, substrate, amphoteric impurity, rhodium, iridium, interface
Короткий адрес: https://sciup.org/140259555
IDR: 140259555
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