Influence of spatial correlation of defects on X-ray scattering from a semiconductor superlattice

In the framework of the statistical theory of X-ray diffraction from semiconductor superlattice the influence of spatial defects correlation on the angular distribution of scattering intensity was investigated. A numerical simulation of X-ray diffraction on a superlattice in the presence and absence of correlation effects was carried out. It is shown that the maximums of the diffuse scattering cannot coincide with coherent peaks.