The influence of monocrystals growth conditions on carrying over and accumulation of impurity atoms in a growing crystal

Streams of impurity atoms on each of sites 0« aC (O) -bC(l) in which a and b are determined through convective и, drift u, and thermal-diffusion и speeds of carry of impurity atoms accordingly in a melt (a, b), in a crystal (a, b), and also on border of the unit of phases (asf bj. From a condition of quasistationary process of growth the distribution coefficient of impurity atoms concentration on each of sites are found and the general distribution coefficient of impurity atoms between melt volume and a cooled part of a growing ingot K C is determined. The received expression for K allows to analyze influence of modes of growth (speed of a crystal grows uc, a gradient of temperatures (through uq) and force fields (through ud)) on carry and accumulation of impurity atoms in a growing crystal.