Effect of elastic stresses on the formation of structural defects in semiconductors

The structural defects formation in semiconductors CdTe, HgTe, ZnTe, ZnSe, ZnS, Si and GaAs were investigated by method of transmission electron microscopy. It is found that the same processing conditions in semiconductors А2В6 defects are formed with largest dimensions and higher density as compared with Si and GaAs. The degree of crystallattice irregularities and defect formation intensity decreases in the following order of ZnS → ZnSe ≈ CdS → CdTe ≈≈ HgTe → ZnTe to GaAs and Si. The experimental results are explained on the basis of analysis of the elastic stressesin the material generated as a result of the formation of structural defects.