Restoration of source arrangement height in mathematical model of thin films growth on substrates

Current research in the field of applied mathematics and computer science at the present time is the study of this little-studied physical process as a diffusion growth of thin spat-hella on substrates. Many domestic and foreign scientists have conducted research by decision analytical and numerical methods of initial-boundary value problems, which originally explicitly or implicitly assumed that the solution of the problem exists and is unique. In mathematical modeling there is often a question of solution of inverse problems arising in the research of the diffusion growth of thin spat-hella on substrates. This paper focuses on the solution of inverse problems encountered in the study of the mathematical model. The aim of the study is to develop analytical and numerical solution of the problem of recovering the height of the source atoms spat-hella. Achievement of this goal is based on the intended use of the re-sults and methods of mathematical physics equations, integral equations, mathematical analysis, partial differential equations, solid-state physics, crystallography. An analytical solution of the inverse prob-lem of recovering the height of the source of the atoms of the spat-hella deposited on the substrate. The numerical experiment by the growth of bismuth spat-hella on an aluminum substrate. Analysis of the results of the numerical experiment showed that the results presented in the article are consistent with experimental data. The absolute error of calculation does not exceed 2%. It should be noted that this research is of great practical value and can be used in microelectronics, creating large scale inte-grated circuits, etc.