VIABILITY AND TRANSFECTION OF HeLa CELLS ON THE SURFACE OF SEMICONDUCTOR NANOWIRES

The article presents the results of a study of the viability of HeLa cells during their cultivation on the surface of a vertical array of semiconductor nanowires (NWs). The viability of cells during growth on the surface of NWs formed from gallium phosphide with an average length of 4 and 8 μm, as well as gallium arsenide with an average length of 2 μm, is shown. The possibility of transfection of cells during cultivation on an NW array by direct introduction of a plasmid into the culture medium is demonstrated. The dependence of transfection efficiency on the average NW length is shown.