Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate
Автор: Viranjay M. Srivastava, Setu P. Singh
Журнал: International Journal of Intelligent Systems and Applications(IJISA) @ijisa
Статья в выпуске: 5 vol.4, 2012 года.
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The scaling of simple gate transistors requires the scaling and transistor elements like source/drain junction became difficult to scale further after a limit due to adverse effect of electrostatic and short-channel performance. The solution of the problem is tri-gate where we can increase the performance without increasing the width and without scaling. In this paper we have described the parameter of tri-gate and taking the high dielectric as substrate.
Tri-gate MOSFET, Radio frequency, HfO_2, High dielectric constant, CMOS, VLSI
Короткий адрес: https://sciup.org/15010251
IDR: 15010251
Список литературы Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate
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