Numerical simulation of the effect of rotating magnetic field on heat and mass transfer during ahp semiconductor crystal growth

Numerical simulations are performed to investigate the effect of an axially symmetric rotating magnetic field on heat and mass transfer during the 2" Ga:Ge semiconductor single crystal growth by the Axial Heating Processing (AHP) technique. The flow pattern and the results of dopant distribution in the melt and its segregation in the crystal are obtained in relation to temperature boundary conditions and intensity of the applied magnetic field. It has been found that the temperature conditions imposed on the submerged heater have significant effect on mass transfer in the melt and, as a consequence, on dopant segregation in the grown crystal. It is shown that the applied low-intensity rotating magnetic field can decrease the radial dopant segregation in the crystal.