Dielectric properties of solid solutions of manganese chalkogenides substituted by ions of gadolinium

The paper describes materials based on solid solutions GdxMn1-xS and GdxMn1--xSe, which in the future can be used in aerospace industry as sensors, detectors, and information writer-readers. In solid solutions GdxMn1-xA (A = S, Se) (x ≤ 0.2), capacitance and tangent of the dielectric loss angle were meas- ured at the frequency of 10 kHz without a magnetic field and in the magnetic field of 8 kOe in the temperature range 100-500 К. The growth of the dielectric permittivity and the maximum of dielectric losses in the low-temperature region were observed. The displacement of the temperature of the maximum of the imaginary part of the permittivity in the direction of high temperatures is found with increasing concentration. For two compositions, a magnetocapacitance effect was observed. The magnetocapacitance effect δεН = (ε(Н,T)-ε(0,Т))/ε(0,Т)) was determined as a result of inves- tigation of the complex dielectric permittivity. The synthesis of new chalcogenide compounds in the cationic substitution of manganese by gadolinium in the MnS and MnSe systems will make it possible to clarify the effect of the anion system, as a result of studying its magnetoresis- tive properties with concentration in the gadolinium ion flux region along the x ≤ 0.2 lattice. Dielectric losses are described in the Debye model with the freezing of dipole moments and in the model of orbital- charge ordering.