Enhancement of electroluminescence of ZnSe/ZnO:O, Zn nanoh heterojunctions after proton irradiation

It is shown in the work that proton irradiation led to an increase in the intensity of electroluminescence by ~3.48 times at λmax=600 nm, due to an increase in the concentration of Frenkel pairs and electron - hole pairs, this may be due to an increase in Eg by 0.02 eV and a decrease in light scattering delocalized carriers in the range 500 - 1100 nm.