Functional single-chip light-to-frequency converter based on high-resistivity n-GaAs
Автор: Mikhailov A.I., Mitin A.V., Kozhevnikov I.O.
Журнал: Физика волновых процессов и радиотехнические системы @journal-pwp
Статья в выпуске: 4 т.17, 2014 года.
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The prototype of single-chip light-to-frequency converter is described. This converter is a mesa-planar photoresistor structure based on high-resistivity gallium arsenide with an N-shaped current-voltage characteristic. The converter functionality and utility for optoelectronics are showed. The main characteristics are indicated. The advantages and limitations of the proposed converter under the present analogs are analyzed.
Functional microelectronics, semi-insulating gallium arsenide, recombination current instability, photoelectric converters
Короткий адрес: https://sciup.org/140255888
IDR: 140255888