Development of a differential signal transceiver according to the LVDS standard based on CMOS 180nm technology
Автор: Kalyonov A.D.
Журнал: Международный журнал гуманитарных и естественных наук @intjournal
Рубрика: Технические науки
Статья в выпуске: 11-4 (86), 2023 года.
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The paper presents a powerful signal reception and transmission switch made using CMOS technology (complementary metal-oxide-semiconductor) with a technological norm of 0.18 microns and a frequency of up to 2 GHz. An urgent and time-consuming task is to develop a differential switch with minimal losses at the same time with maximum isolation. The data obtained as a result of Cadence CAD modeling show that the proposed design of the bridge differential switch provides a linearity of up to 18 dBm in the frequency range 100 MHz - 2 GHz with losses of no more than 2 dB and maximum isolation of at least 32 dB. The use of a differential bridge circuit makes it possible to compensate for a parasitic signal.
Switch, differential signal, cmos
Короткий адрес: https://sciup.org/170201451
IDR: 170201451 | DOI: 10.24412/2500-1000-2023-11-4-55-58