Elastoconductivity of germanene nanoribbons with isomorphic substitutional defects

The results of the theoretical study of the impurity germanium nanoribbons piezoresistance are demonstrated in this article. The nanomaterial contains point isomorphic substitution defects of different concentrations of two types of isomorphic atoms of group IV: silicon (Si) and tin (Sn). The functions of the dependence of the longitudinal component of the elastic conductivity tensor on the magnitude of the strain of tension (compression), types and concentrations of defects are presented to study the characteristics of the piezoresistance effect. The results of the calculations show a qualitative agreement of the behavior of the piezoresistance constant of germanene nanoribbons for two types of isomorphic defects and with the literature data. Quantitative analysis allows us to conclude that the longitudinal component is higher in modulus in nanofilms with tin impurities, which indicates a more pronounced piezoresistance of the material. Conclusions are showed, that the impurity germanene with the tin atoms manifested more pronounced piezoresistance properties. It was be explained by high the electron mobility of the valence shell of this element compared to the germanium atom. This shell of the atom turns out to be more sensitive to deformations of the structure. Such material can be more effectively integrated as a basic element of semiconductor electronics devices due to the high susceptibility of its properties to the effects of deformations and the concentration of structural defects in accordance with this factor.