Changing the electrical properties of modified films a-S: H after annealing at high temperature

It was determined in the work that due to high-temperature annealing in a hydrogen flow in an a-Si: H film doped with boron, in contrast to the undoped film, in addition to the hopping conductivity at the Fermi level and band conductivity, the hopping conductivity was monitored by states in the tail of the valence band. The noted differences in the change in the electrical properties of the studied doped and also undoped films under the influence of high-temperature annealing are due to an increase in the doping efficiency and also to a change in the distribution of the density of states in the forbidden band in the a-Si: H film annealed with boron.