Electro-fluctuation method for estimation of bipolar transistor structures quality

The problems, which are related to application of low-frequency noise (LFN) parameters and characteristics for estimation of transistor structures quality, are discussed in the paper. A physical equivalent noise scheme of transistor structure is proposed. The scheme considers both non-homogeneous distribution of current on the area of emitter junction and the influence of distributed resistors of active areas. Possibility of the use of proposed scheme for analysis of experimental data and valid selecting of modes and conditions for LFN measurements for transistor structure diagnostics problems is discussed. The results of theoretical analysis were proved by experiment.