Mathematical modeling for ion implantation based on the plasma pulse flow (during the processing of products in the pulsed electric field)
Автор: Denisov S.V., Kostychev I.V., Samorukov I.I., Fominsky V.Y.
Журнал: Вестник Ассоциации вузов туризма и сервиса @vestnik-rguts
Рубрика: Моделирование технических и технологических процессов
Статья в выпуске: 4 т.2, 2008 года.
Бесплатный доступ
The new computer model describes the dynamics of pulsed plasma and the process of structuring the flow of high- energy ions on the processed surface with the negative high-voltage pulse, connected to the processed product according to a set program. The model calculates the flow and energy spectrum of the implanted ions based on the primary characteristics of plasma, technical parameters of high-voltage system, and the conditions of switching the electrical impulses.
Короткий адрес: https://sciup.org/140208986
IDR: 140208986
