Formation and transport of electronic defects in the solid elecrtolyte RbCu Cl I. 4 3 2

This paper analyses the reasons of considerable difference of electronic conductivity for RbCu Cl I 4 3 2 samples, which were prepared under different conditions by various authors. It is assumed that the value of electronic conductivity depends on quantity of electronic defects, which caused by oxidation of RbCu Cl I during its preparation. The relevant quasi-chemical reactions are considered. 4 3 2 During experiments with Wagner's cell it was determined that the concentration of electronic defects in examined RbCu Cl I sample is equal to 1,25*1018 cm-3. The diffusion coefficient of electronic defects is 4 3 2 equal to 1,5*10-8 cm2*s-1; their conductivity is 1,2*10-7 S*cm-1. The estimated value of potential of vitreous-carbon electrode after electrochemical decomposition of RbCu Cl I (0,606V) coincides with the experimental value (0,58V) satisfactorily. This confirms the adequacy 4 3 2 of considered model of electronic defects formation during preparation of RbCu Cl I. 4 3 2