Cutting grooves with pulsed and quasi-continuous CO2 lasers of GaN films for removal of nitrogen gas

This paper discusses the use of modern materials such as sapphire, silicon, diamond, gallium nitride in the production of solid-state semiconductor devices, elements of optics, micro and optoelectronics. Special attention is paid to the process of cutting grooves for the removal of gases during the separation of the GaN film. In the course of the work, experiments were carried out on films grown by the HVPE and MOCVD method. Cutting is a key operation in the production of such devices. Research shows that the introduction of laser cutting into production processes can significantly increase productivity and increase the yield of suitable products based on semiconductor wafers.