Computation of a contact potentials difference of a smooth n-n+-transition
Автор: Arefev A.S.
Журнал: Физика волновых процессов и радиотехнические системы @journal-pwp
Статья в выпуске: 4 т.18, 2015 года.
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Formulae for an approximate solution of an ordinary differential equation by means of an interpolational method of arbitrary order are obtained. A computation of an interior electric field strength and conductivity electrons and holes concentrations distributions in a smooth n-n+-transition is carried out. A contact potentials difference of this structure is evaluated.
Interpolational method of an ordinary differential equation solution, interior electric field in a non-homogeneous semiconductor, contact potentials difference of an electric transition
Короткий адрес: https://sciup.org/140255942
IDR: 140255942
