Field and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrate

Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels. The obtained results show, that deep acceptor level makes capital contribution in volume charge forming from the side of a substrate. Magnitude and distribution of this charge depend on deep acceptors concentration.