Рентгеноспектральный микроанализ поверхности карбида кремния после микроцарапания титана

The structure of a surface of carbide of silicon directly after a microscratching of titanium and after deleting the stuck metal by etching in solution of fluoric acid is considered. Research are conducted on an electron microscope of Versa 3D. The morphology of a surface was studied in case of increase from 800 to 20000×. The chemical composition was determined by method of local microx ray spectral analysis when shooting in separate points and scanning of sections of a surface. Acceleration voltage of electrons of excitation was changed from 5 to 20 kV. In silicon carbide nanolayers micro x-ray spectral analysis showed existence of five elements: carbon, silicon, titanium, nitrogen and oxygen. In case of 5 kV when depth of a zone of generation of X-ray characteristic radiation doesn't exceed 270-320 nanometers, on silicon carbide surface sections without visible traces of the stuck metal concentration of titanium reaches 3 % atom. The ratio between atoms of silicon and carbon testifies to existence of excess atoms of carbon. With increase in the layer of generation of X-ray characteristic radiation of atoms of titanium accelerating to 15 kV depth can reach 2000 nanometers. Therefore with growth U concentration of titanium decreases as the same amount of the titanium concentrated in a near-surface layer averages on much bigger volume now. In case of U = 15 kV concentration of titanium on not etched and etched surfaces made respecti-vely 0,56 and 0,36 % atom. Before etching the amount of atoms of carbon is 1,7 times more than atoms of silicon. Availability of excess carbon is explained by presence rather big amount of carbon a surface swore. After etching, as a result of lowering of the content of atoms of titanium, oxygen and nitrogen, the general tendency to lowering of atoms of carbon with c(Si) increases. As a result the quantitative ratio between atoms of carbon and silicon decreases to 1,4. The increase in acceleration voltage means also increase in volume of the main material, that is carbide of the silicon which is in a generation zone. With growth U concentration of titanium, nitrogen, oxygen decreases as these elements are in the main on a silicon carbide surface. The content of the atoms of silicon and carbon which are a part of carbide of silicon will increase practically in proportion to generation volume. Therefore with growth U concentration of silicon shall increase, and carbon - to decrease. Actually with increase in U with c(Si) on not etched surface increases in the range of 5-15 kV more than for 25 % and for 10 % after etching. Concentration of carbon tends to lowering. Only in case of acceleration voltage of 20 kV atomic concentration of carbon and nitrogen taking into account a confidential interval on arithmetic averages of value can be read the approximately identical. In these intervals U concentration of carbon decreases significantly that confirms earlier suggested about a tendency of lowering c(C) with increase U.