The influence of tunnel effect on the current injection of spin light-emitting diodes with InGaAs/GaAs quantum wells
Автор: Saeid S.
Журнал: Физика волновых процессов и радиотехнические системы @journal-pwp
Статья в выпуске: 2 т.18, 2015 года.
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By using current-voltage characteristic and electro-photo luminescence measurements, the efficiency of spin electronic injection was investigated in the Co/Al 2O 3 tunnel barrier/GaAs based structure, where spin current was generated by electric injection from FM to GaAs through the tunnel barrier. The investigations were performed on the devices with different tunnel barrier thickness of Al 2O 3 surmounted by a thin Co ferromagnetic layer. The increase of the effectiveness of the electrical injection was identified by an increase in the intensity of electroluminescence; thereby we can define the optimal thickness of the layer of Al 2O 3 as a tunnel and as a diffusion barrier. Also, manipulation of the tunneling barrier thickness leads to control of emission threshold of diode structures and sensitive diode. We also demonstrated the dependence between the tunneling barrier thickness and Schottky barrier height and the resistance of diode structure.
Spin polarization, spin injector, tunnel-thin barrier, spin-polarized charge carriers, diffusion penetration
Короткий адрес: https://sciup.org/140255918
IDR: 140255918
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