The influence of charge processes characteristics in the solid-body layer structures on efficiency of the charge transfer in devices with the charge link

The modified methods for determining the solid-body structure characteristics (the frequency factor and the order of kinetics) containing the dielectric and semiconductor layers have been described. There has been established the dependence of the signal charge loss while its transfer from the characteristics mentioned in the semiconductor near-surface range for the structures of the «metal-polysilicon-dielectric-semiconductor» type possessing the charge link.